Ballistic transport in silicon vertical transistors

被引：18

作者：

Nishiguchi, K

Oda, S

机构：

[1] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, Tokyo 1528552, Japan

[2] JST, CREST, Meguro Ku, Tokyo 1528552, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 03期

关键词：

D O I：

10.1063/1.1489496

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Clear evidence for ballistic transport has been observed at 5 K from silicon vertical transistors with wrap around gates. The effect of channel shape was investigated experimentally and accounted for theoretically by the anisotropy of the Si conduction band. A reduction in conductance and the appearance of multiple steps were observed when a magnetic field was applied perpendicular to the channel. These results were successfully modeled within the effective mass approximation by including the magnetic vector potential and effects due to series resistance and the spin and valley degeneracy. (C) 2002 American Institute of Physics.

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收藏

页码：1399 / 1405

页数：7

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