Impurity-induced modes of Mg, As, Si, and C in hexagonal and cubic GaN

被引:53
作者
Kaczmarczyk, G [1 ]
Kaschner, A [1 ]
Hoffmann, A [1 ]
Thomsen, C [1 ]
机构
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源
PHYSICAL REVIEW B | 2000年 / 61卷 / 08期
关键词
D O I
10.1103/PhysRevB.61.5353
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a cluster-model calculation of local vibrational modes in hexagonal GaN using the valence-force model of Keating and Kane with valence-force parameters fitted to Raman and neutron-scattering experiments. We used the scaling-factor approximation to describe the interatomic forces of the central defect atom. For hexagonal GaN:Mg we find three modes at 136, 262, and 656 cm(-1) in-good agreement with experiments. For cubic GaN:As the isolated impurity atom gives us local modes at 95, 125, 151,and 250 cm(-1), which were observed as sharp lines in the experiment. For Si and C defects for which local modes have not yet been reported, a similar choice of scaling factor as for Mg and As leads to modes that strongly hybridize with the host phonons.
引用
收藏
页码:5353 / 5357
页数:5
相关论文
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