Local vibrational modes in Mg-doped GaN grown by molecular beam epitaxy

被引：95

作者：

Kaschner, A

Siegle, H

Kaczmarczyk, G

Strassburg, M

Hoffmann, A

Thomsen, C

Birkle, U

Einfeldt, S

Hommel, D

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Univ Bremen, Inst Festkorperphys, FB 1, D-28359 Bremen, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 22期

关键词：

D O I：

10.1063/1.123320

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Local vibrational modes in the region of the acoustic and optical phonons are reported for Mg-doped GaN grown by molecular beam epitaxy. The modes, studied by Raman spectroscopy, appear in addition to the known modes in the high-energy region around 2200 cm(-1). We suggest disorder-activated scattering and scattering from Mg-related lattice vibrations to be the origin of the low-energy modes. Our assignment is supported by calculations based on a modified valence-force model of Kane. Temperature-dependent measurements between 4 and 300 K exclude an electronic Raman-scattering mechanism. We also report a new line at 2129 cm(-1) and discuss the origin of all five observed high-energy modes. (C) 1999 American Institute of Physics. [S0003-6951(99)00822-0].

引用

页码：3281 / 3283

页数：3

共 20 条

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