RESONANT RAMAN-ACTIVE ACOUSTIC PHONONS IN ION-IMPLANTED GAAS

被引：15

作者：

HOLTZ, M

ZALLEN, R

BRAFMAN, O

机构：

[1] VIRGINIA POLYTECH INST & STATE UNIV,DEPT PHYS,BLACKSBURG,VA 24061

[2] TECHNION ISRAEL INST TECHNOL,DEPT PHYS,HAIFA,ISRAEL

[3] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,HAIFA,ISRAEL

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.38.6097

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：6097 / 6106

页数：10

相关论文

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