Doping dependence of charge-transfer excitations in La2-xSrxCuO4 -: art. no. 094524

被引:36
作者
Kim, YJ [1 ]
Hill, JP
Komiya, S
Ando, Y
Casa, D
Gog, T
Venkataraman, CT
机构
[1] Brookhaven Natl Lab, Dept Phys, Upton, NY 11973 USA
[2] Cent Res Inst Elect Power Ind, Tokyo 2018511, Japan
[3] Argonne Natl Lab, Adv Photon Source, CMC CAT, Argonne, IL 60439 USA
关键词
D O I
10.1103/PhysRevB.70.094524
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report a resonant inelastic x-ray scattering (RIXS) study of the doping dependence of charge-transfer excitations in La2-xSrxCuO4. The momentum dependence of these charge excitations are studied over the whole Brillouin zone in underdoped (x=0.05) and optimally doped (x=0.17) samples, and compared with that of the undoped (x=0) sample. We observe a large change in the RIXS spectra between the x=0 and x=0.17 samples, while the RIXS spectra of the x=0.05 sample are similar to that of the x=0 sample. The most prominent effect of doped holes on the charge excitation spectra is the appearance of a continuum of intensity, which exhibits strong momentum dependence below 2 eV. For the x=0.17 sample, some of the spectral weight from the lowest-lying charge-transfer excitation of the undoped compound is transferred to the continuum intensity below the gap, in agreement with earlier optical studies. However, the higher-energy charge-transfer excitation carries significant spectral weight even for the x=0.17 sample. The doping dependence of the dispersion of this charge-transfer excitation is also discussed and compared with recent theoretical calculations.
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收藏
页码:094524 / 1
页数:7
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