Surface loss probabilities of hydrocarbon radicals on amorphous hydrogenated carbon film surfaces

被引：91

作者：

Hopf, C ^{[1
]}

Schwarz-Selinger, T ^{[1
]}

Jacob, W ^{[1
]}

von Keudell, A ^{[1
]}

机构：

[1] EURATOM, Max Planck Inst Plasmaphys, D-85748 Garching, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 06期

关键词：

D O I：

10.1063/1.372246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface loss probabilities of hydrocarbon radicals on the surface of amorphous hydrogenated carbon (C:H) films are investigated by depositing films inside a cavity with walls made from silicon substrates. This cavity is exposed to a discharge using different hydrocarbon source gases. Particles from the plasma can enter the cavity through a slit. The surface loss probability beta is determined by analysis of the deposition profile inside the cavity. This surface loss probability corresponds to the sum of the probabilities of effective sticking on the surface and formation of a nonreactive volatile product via surface reactions. By comparing the deposition profiles measured in CH4, C2H2, C2H4, C2H6 discharges one obtains for C2H radicals beta=0.80 +/- 0.05, for C2H3 radicals beta=0.35 +/- 0.1, and for C2H5 radicals beta < 10(-3). The growth rate of C:H films is, therefore, very sensitive to any contribution of undersaturated C2Hx species in the impinging flux from a hydrocarbon discharge. (C) 2000 American Institute of Physics. [S0021-8979(00)07006-7].

引用

页码：2719 / 2725

页数：7

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