Interlayer composition of HfO2/Si(001) films

被引：22

作者：

Copel, M ^{[1
]}

Reuter, MC ^{[1
]}

Jamison, P ^{[1
]}

机构：

[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 03期

关键词：

D O I：

10.1063/1.1773365

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report medium energy ion scattering results that determine the extent of Hf incorporation in the interfacial region of HfO2/Si(001) films. The lack of change in the Hf backscatter peak after interlayer growth by in situ oxidation indicates extremely low levels of Hf incorporation. We conclude that silicate formation is not a significant factor in determining capacitances of HfO2/Si(001) structures, provided that the deposition technique does not involve creation of a silicide as an intermediate step. (C) 2004 American Institute of Physics.

引用

页码：458 / 460

页数：3

共 19 条

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