Native defects and their interactions in silicon

被引：23

作者：

Colombo, L

机构：

[1] Univ Milan, INFM, I-20125 Milan, Italy

[2] Univ Milan, Dept Mat Sci, I-20125 Milan, Italy

来源：

PHYSICA B-CONDENSED MATTER | 1999年 / 273-4卷

关键词：

silicon; self-interstitial defect; vacancy defect; like-defect cluster; tight-binding molecular dynamics; lattice kinetic Monte Carlo;

D O I：

10.1016/S0921-4526(99)00522-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We discuss the application of various quantum-mechanically based computational models to the investigation of microstructural evolution in crystalline silicon mediated by intrinsic defects. Focus is on the formation of like-defect clusters. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：458 / 462

页数：5

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