On the electrostatic potential profile in biased molecular wires

被引:55
作者
Nitzan, A [1 ]
Galperin, M
Ingold, GL
Grabert, H
机构
[1] Tel Aviv Univ, Sackler Fac Sci, Sch Chem, IL-69978 Tel Aviv, Israel
[2] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany
[3] Univ Freiburg, Inst Phys, D-79104 Freiburg, Germany
关键词
D O I
10.1063/1.1522406
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The potential profile across a biased molecular junction is calculated within the framework of a simple Thomas-Fermi-type screening model. In particular, the relationship between this profile and the lateral molecular cross section is examined. We find that a transition from a linear potential profile to a potential that drops mainly near the molecule-metal contacts occurs with increasing cross-section width, in agreement with numerical quantum calculations. (C) 2002 American Institute of Physics.
引用
收藏
页码:10837 / 10841
页数:5
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