Stability diagrams of laterally coupled triple vertical quantum dots in triangular arrangement

被引：47

作者：

Amaha, S. ^{[1
]}

Hatano, T. ^{[1
]}

Kubo, T. ^{[1
]}

Teraoka, S. ^{[1
]}

Tokura, Y. ^{[1
,2
]}

Tarucha, S. ^{[1
,3
]}

Austing, D. G. ^{[4
]}

机构：

[1] ICORP JST, Quantum Spin Informat Project, Atsugi, Kanagawa 2430198, Japan

[2] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[3] Univ Tokyo, Sch Engn, Dept Appl Phys, Bunkyo Ku, Tokyo 1338656, Japan

[4] Natl Res Council Canada, Inst Microstruct Sci M50, Ottawa, ON K1A 0R6, Canada

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 09期

关键词：

aluminium compounds; electrical conductivity; gallium arsenide; III-V semiconductors; resonant tunnelling; semiconductor quantum dots;

D O I：

10.1063/1.3089841

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate three vertical quantum dots (QDs) laterally coupled in a triangular arrangement forming a triple QD (tQD) with common source and drain electrodes. The three equidistant dot mesas each have one gate electrode allowing control of the electrochemical potential in each QD. From the stability diagrams observed by measuring current through the tQD on sweeping the voltages on two of the gate electrodes for different values of voltage on the third gate electrode, we build up part of the three-dimensional stability diagram. Our device can be useful to reveal the consequences of interdot coupling on electronic states in tQDs.

引用

页数：3

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