AFM studies on ZnS thin films grown by atomic layer epitaxy

被引：84

作者：

Ihanus, J ^{[1
]}

Ritala, M ^{[1
]}

Leskela, M ^{[1
]}

Prohaska, T ^{[1
]}

Resch, R ^{[1
]}

Friedbacher, G ^{[1
]}

Grasserbauer, M ^{[1
]}

机构：

[1] VIENNA UNIV TECHNOL,INST ANALYT CHEM,A-1060 VIENNA,AUSTRIA

来源：

APPLIED SURFACE SCIENCE | 1997年 / 120卷 / 1-2期

基金：

芬兰科学院; 奥地利科学基金会;

关键词：

AFM; ALE; ZnS; thin film; mica; glass;

D O I：

10.1016/S0169-4332(97)00226-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Polycrystalline ZnS films were grown from ZnCl2 and H2S on glass and mica using the atomic layer epitaxy (ALE) technique. Morphological and crystalline changes during the ALE growth of Zns were studied by AFM and XRD. AFM measurements revealed that substantial agglomeration took place in the beginning of the growth. On glass the nucleation density of ZnS was higher than on mica and consequently the films on glass remained smoother than those on mica. XRD measurements revealed that orientation of the films was stronger on mica than on glass. (C) 1997 Elsevier Science B.V.

引用

页码：43 / 50

页数：8

共 26 条

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