Structural characterization of relaxor ferroelectric PbMg1/3Nb2/3O3-PbTiO3 thin film heterostructures deposited by pulsed laser ablation

被引：26

作者：

Levoska, J

Tyunina, M

Sternberg, A

Leppävuori, S

机构：

[1] Univ Oulu, Microelect Lab, FIN-90014 Oulu, Finland

[2] Univ Oulu, EMPART Res Grp Infotech, FIN-90014 Oulu, Finland

[3] Latvian State Univ, Inst Solid State Phys, LV-1063 Riga, Latvia

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2000年 / 70卷 / 03期

关键词：

D O I：

10.1007/s003390050046

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly oriented and epitaxial films of relaxer ferroelectric PbMg1/3Nb2/3O3-PbTiO3 (PMN-PT) with a composition (68/32) near the morphotropic phase boundary were deposited by pulsed laser ablation on La0.5Sr0.5CoO3 bottom electrodes, deposited on MgO (100) and LaAlO3 (100). The formation of crystalline phases, epitaxy, film-electrodesubstrate orientation relationships and crystal perfection were studied by X-ray diffraction and scanning electron microscopy. The structural properties were found to depend on the deposition conditions and substrate. Correlation of both the dielectric and relaxer properties in the heterostructures and the structural properties of the PMN-PT films was observed.

引用

收藏

页码：269 / 274

页数：6

相关论文

共 28 条

[1] PREPARATION AND PROPERTIES OF PB[(SC1/2NB1/2)(0.575)TI-0.425]O-3 CERAMICS [J].

ADACHI, M ;

MIYABUKURO, E ;

KAWABATA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5420-5422

[2] NEW TYPE OF FIRST-ORDER PHASE-TRANSITION IN FERROELECTRIC THIN-FILMS [J].

BATRA, IP ;

WURFEL, P ;

SILVERMA.BD .

PHYSICAL REVIEW LETTERS, 1973, 30 (09) :384-387

[3] DIELECTRIC AND PYROELECTRIC PROPERTIES IN THE PB(MG1/3NB2/3)O3-PBTIO3 SYSTEM [J].

CHOI, SW ;

SHROUT, TR ;

JANG, SJ ;

BHALLA, AS .

FERROELECTRICS, 1989, 100 :29-38

[4] MORPHOTROPIC PHASE-BOUNDARY IN PB(MG1/3NB2/3)O3-PBTIO3 SYSTEM [J].

CHOI, SW ;

SHROUT, TR ;

JANG, SJ ;

BHALLA, AS .

MATERIALS LETTERS, 1989, 8 (6-7) :253-255

[5] Dielectric properties of (PMN)(1-x)(PT)x single crystals for various electrical and thermal histories [J].

Colla, EV ;

Yushin, NK ;

Viehland, D .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (06) :3298-3304

[6] THIN-LAYER DIELECTRICS IN THE PB[(MG1/3NB2/3)1-XTIX]O3 SYSTEM [J].

FRANCIS, LF ;

PAYNE, DA .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1991, 74 (12) :3000-3010

[7] DEPOSITION AND CHARACTERIZATION OF FERROELECTRIC PB[(MG1/3NB2/3)(X)TI-1-X]O-3 THIN-FILMS BY RF MAGNETRON SPUTTERING [J].

JIANG, MC ;

HONG, TJ ;

WU, TB .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (11) :6301-6307

[8] THE EFFECT OF ELECTRODE COMPOSITION ON RF MAGNETRON SPUTTERING DEPOSITION OF PB[(MG1/3NB2/3)0.7TI0.3]O3 FILMS [J].

JIANG, MC ;

WU, TB .

JOURNAL OF MATERIALS RESEARCH, 1994, 9 (07) :1879-1886

[9]

Kalvane A., 1997, Key Engineering Materials, V132-136, P1072

[10] Fabrication and optical characterization of Pb(Mg1/3Nb2/3)O3-PbTiO3 planar thin film optical waveguides [J].

Lu, YL ;

Jin, GH ;

Cronin-Golomb, M ;

Liu, SW ;

Jiang, H ;

Wang, FL ;

Zhao, J ;

Wang, SQ ;

Drehman, AJ .

APPLIED PHYSICS LETTERS, 1998, 72 (23) :2927-2929