From graphene to graphite:: Electronic structure around the K point

被引:784
作者
Partoens, B. [1 ]
Peeters, F. M. [1 ]
机构
[1] Univ Antwerp, Dept Fys, B-2020 Antwerp, Belgium
关键词
D O I
10.1103/PhysRevB.74.075404
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Within a tight-binding approach we investigate how the electronic structure evolves from a single graphene layer into bulk graphite by computing the band structure of one, two, and three layers of graphene. It is well known that a single graphene layer is a zero-gap semiconductor with a linear Dirac-like spectrum around the Fermi energy, while graphite shows a semimetallic behavior with a band overlap of about 41 meV. In contrast to a single graphene layer, we show that two graphene layers have a parabolic spectrum around the Fermi energy and are a semimetal like graphite; however, the band overlap of 0.16 meV is extremely small. Three and more graphene layers show a clear semimetallic behavior. For 11 and more layers the difference in band overlap with graphite is smaller than 10%.
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页数:11
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