Improvement of organic electroluminescent device performance by in situ plasma treatment of indium-tin-oxide surface

被引：100

作者：

Ishii, M ^{[1
]}

Mori, T ^{[1
]}

Fujikawa, H ^{[1
]}

Tokito, S ^{[1
]}

Taga, Y ^{[1
]}

机构：

[1] Toyota Cent Res & Dev Labs Inc, Aichi 4801192, Japan

来源：

JOURNAL OF LUMINESCENCE | 2000年 / 87-9卷 / 87期

关键词：

organic EL; indium-tin oxide; surface treatment;

D O I：

10.1016/S0022-2313(99)00581-5

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Indium-tin-oxide (ITO) surface treated by Ar-50% O-2 plasma has been in situ analyzed using X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS), to investigate the relations between the properties of the ITO surface and the properties of organic electroluminescent (EL) devices. The plasma treatment of the ITO surface lowered the operating voltage of the organic EL device. The UPS measurements revealed that the plasma treatment resulted in the increase of the work function of the TTO surface by more than 1 eV. The XPS measurements showed that the plasma treatment effectively removed carbon contaminants from the ITO surface. The work function was correlated with the surface carbon concentration. From these results, the lowering of the operating voltage in the EL devices is attributed to the increase of the work function resulting from the carbon removal by the plasma treatment. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：1165 / 1167

页数：3

共 10 条

[1] CHKODA L, IN PRESS SYNTH METAL
[2] Combined photoemission/in vacuo transport study of the indium tin oxide/copper phthalocyanine/N,N′-diphenyl-N,N′-bis(l-naphthyl)-1,1′biphenyl-4,4"diamine molecular organic semiconductor system
Hill, IG
Kahn, A
[J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (04) : 2116 - 2122
[3] Indium-tin oxide treatments for single- and double-layer polymeric light-emitting diodes: The relation between the anode physical, chemical, and morphological properties and the device performance
Kim, JS
Granstrom, M
Friend, RH
Johansson, N
Salaneck, WR
Daik, R
Feast, WJ
Cacialli, F
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (12) : 6859 - 6870
[4] Characterization of treated indium-tin-oxide surfaces used in electroluminescent devices
Mason, MG
Hung, LS
Tang, CW
Lee, ST
Wong, KW
Wang, M
[J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) : 1688 - 1692
[5] Nüesch F, 1999, APPL PHYS LETT, V74, P880, DOI 10.1063/1.123397
[6] Work function of indium tin oxide transparent conductor measured by photoelectron spectroscopy
Park, Y
Choong, V
Gao, Y
Hsieh, BR
Tang, CW
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (19) : 2699 - 2701
[7] Reduced operating voltage of organic electroluminescent devices by plasma treatment of the indium tin oxide anode
Steuber, F
Staudigel, J
Stössel, M
Simmerer, J
Winnacker, A
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (23) : 3558 - 3560
[8] SUGIYAMA K, 1997, P MRS FALL M BOST, P58
[9] Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic light emitting devices
Wu, CC
Wu, CI
Sturm, JC
Kahn, A
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (11) : 1348 - 1350
[10] ZAHGWILL A, 1988, PHYSICS SURFACES, P213

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