CuInS2 films for photovoltaic applications deposited by a low-cost method

被引：55

作者：

Todorov, T. ^{[1
]}

Cordoncillo, E.

Sánchez-Royo, J. F.

Carda, J.

Escribano, P.

机构：

[1] Univ Jaume 1, Dept Quim Inorgan & Organ, Castellon De La Plana 12071, Spain

[2] Univ Valencia, Inst Ciencia Mat, E-46100 Valencia, Spain

来源：

CHEMISTRY OF MATERIALS | 2006年 / 18卷 / 13期

关键词：

D O I：

10.1021/cm0606631

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report an atmospheric-pressure deposition method for preparing well-adhered and compact CuInS2 films. The precursor film is obtained by a solution-coating technique and is subjected to a low-cost and safe one-step reduction-sulfurization treatment. A maximum thickness of 300 nm is achieved per layer, and up to three layers were sulfurized at a time. The obtained films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and visible-near-infrared (vis-NIR) spectrophotometry.

引用

页码：3145 / 3150

页数：6