ZnO-nanorod arrays for solar cells with extremely thin sulfidic absorber

被引：65

作者：

Belaidi, A. ^{[1
]}

Dittrich, Th ^{[1
]}

Kieven, D. ^{[1
]}

Tornow, J. ^{[1
]}

Schwarzburg, K. ^{[1
]}

Kunst, M. ^{[1
]}

Allsop, N. ^{[1
]}

Lux-Steiner, M. -Ch. ^{[1
]}

Gavrilov, S. ^{[2
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

[2] Moscow Inst Elect Technol, Moscow 124498, Russia

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 6-7期

关键词：

Eta-solar cell; Zno-nanorod arrays; In2S3;

D O I：

10.1016/j.solmat.2008.11.035

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Solar cells with an extremely thin sulfidic absorber have been prepared by spray ion layer gas reaction (ILGAR) of In2S3 on ZnO-nanorod arrays. As transparent hole conductor, CuSCN was deposited on the coated ZnO nanorods by impregnation. Surface photovoltage spectroscopy was applied to characterize states contributing to excess carrier generation and charge separation. The charge-selective contact is formed at the In2S3/CuSCN interface region the states of which also contribute significantly to the photocurrent. The influence of annealing temperature and annealing time of the In2S3/CuSCN contact region on the open-circuit potential (V-OC), short-circuit current (I-SC) and fill factor (FF) was studied in detail. For solar cells based on ZnO-nanorod arrays (rod length 1.5 mu m), efficiency of 2.8% is obtained at AM 1.5. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1033 / 1036

页数：4

共 9 条

[1] Indium sulfide thin films deposited by the spray ion layer gas reaction technique [J].

Allsop, N. A. ;

Schoenmann, A. ;

Belaidi, A. ;

Muffler, H. -J. ;

Mertesacker, B. ;

Bohne, W. ;

Strub, E. ;

Roehrich, J. ;

Lux-Steiner, M. C. ;

Fischer, Ch. -H. .

THIN SOLID FILMS, 2006, 513 (1-2) :52-56

[2] Photovoltage in nanocrystalline porous TiO2 -: art. no. 075204 [J].

Duzhko, V ;

Timoshenko, VY ;

Koch, F ;

Dittrich, T .

PHYSICAL REVIEW B, 2001, 64 (07) :752041-752047

[3] Solar cell with extremely thin absorber on highly structured substrate [J].

Ernst, K ;

Belaidi, A ;

Könenkamp, R .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (06) :475-479

[4] Charge selective contact on ultra-thin In(OH)xSy/Pb(OH)xSy heterostructure prepared by SILAR [J].

Gavrilov, S ;

Oja, I ;

Lim, B ;

Belaidi, A ;

Bohne, W ;

Strub, E ;

Röhrich, J ;

Lux-Steiner, MC ;

Dittrich, T .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (05) :1024-1029

[5] Surface photovoltage phenomena: theory, experiment, and applications [J].

Kronik, L ;

Shapira, Y .

SURFACE SCIENCE REPORTS, 1999, 37 (1-5) :1-206

[6] Dye-sensitized solar cell with the hole collector p-CuSCN deposited from a solution in n-propyl sulphide [J].

Kumara, GRRA ;

Konno, A ;

Senadeera, GKR ;

Jayaweera, PVV ;

De Silva, DBRA ;

Tennakone, K .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 69 (02) :195-199

[7] CdSe-Sensitized p-CuSCN/nanowire n-ZnO heterojunctions [J].

Lévy-Clément, C ;

Tena-Zaera, R ;

Ryan, MA ;

Katty, A ;

Hodes, G .

ADVANCED MATERIALS, 2005, 17 (12) :1512-1515

[8] Photoelectrical properties of In(OH)xSy/PbS(O) structures deposited by SILAR on TiO2 [J].

Oja, I ;

Belaidi, A ;

Dloczik, L ;

Lux-Steiner, MC ;

Dittrich, T .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (04) :520-526

[9] Modeling extremely thin absorber solar cells for optimized design [J].

Taretto, K ;

Rau, U .

PROGRESS IN PHOTOVOLTAICS, 2004, 12 (08) :573-591

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