Broadband enhancement of light emission in silicon slot waveguides

被引：69

作者：

Jun, Young Chul ^{[1
]}

Briggs, Ryan M. ^{[2
]}

Atwater, Harry A. ^{[2
]}

Brongersma, Mark L. ^{[1
]}

机构：

[1] Stanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USA

[2] CALTECH, Thomas J Watson Lab Appl Phys, Pasadena, CA 91125 USA

来源：

OPTICS EXPRESS | 2009年 / 17卷 / 09期

关键词：

CONFINING LIGHT; MICROCAVITY; ERBIUM;

D O I：

10.1364/OE.17.007479

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We investigate the light emission properties of electrical dipole emitters inside 2-dimensional (2D) and 3-dimensional (3D) silicon slot waveguides and evaluate the spontaneous emission enhancement (F-p) and waveguide coupling ratio (beta). Under realistic conditions, we find that greater than 10-fold enhancement in Fp can be achieved, together with a beta as large as 0.95. In contrast to the case of high Q optical resonators, such performance enhancements are obtained over a broad wavelength region, which can cover the entire emission spectrum of popular optical dopants such as Er. The enhanced luminescence efficiency and the strong coupling into a limited set of well-defined waveguide modes enables a new class of power-efficient, CMOS-compatible, waveguide-based light sources. (c) 2009 Optical Society of America

引用

页码：7479 / 7490

页数：12

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