Thermoreflectance characterization of interband transitions of In0.34Al0.66As0.85Sb0.15 expitaxy on InP

被引：5

作者：

Ho, C. H. ^{[1
]}

Li, J. H. ^{[1
]}

Lin, Y. S. ^{[1
]}

机构：

[1] Natl Dong Hwa Univ, Dept Mat Sci & Engn, Shoufeng 974, Hualian, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 19期

关键词：

D O I：

10.1063/1.2386920

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interband transitions of a lattice matched In0.34Al0.66As0.85Sb0.15 film epitaxy on InP (InAlAsSb/InP) has been characterized using thermoreflectance (TR) measurements in the temperature range between 20 and 300 K. The low-temperature TR spectrum of InAlAsSb clearly shows a lot of interband transition features present at energies ranging from 1.25 to 5.5 eV at 20 K. The observed interband transitions include one broadened feature, two excitonic peaks, and three of the other critical-point transitions consisted in the zinc-blende InAlAsSb. Transition energies for the features are analyzed and their transition origins are characterized.

引用

页数：3

共 15 条

[1] MODULATION-SPECTROSCOPY STUDY OF THE GA1-XALXSB BAND-STRUCTURE [J].

ALIBERT, C ;

JOULLIE, A ;

JOULLIE, AM ;

ANCE, C .

PHYSICAL REVIEW B, 1983, 27 (08) :4946-4954

[2] Theoretical study of thresholdless Auger recombination in compressively strained InAlAsSb/GaSb quantum wells [J].

Andreev, AD ;

Zegrya, GG .

APPLIED PHYSICS LETTERS, 1997, 70 (05) :601-603

[3]

Aspnes D. E., 1980, Handbook on semiconductors, vol.II. Optical properties of solids, P109

[4] Measurement of AlInAsSb GaInAsSb heterojunction band offset by photoluminescence spectroscopy [J].

Chang, JR ;

Su, YK ;

Lin, CL ;

Wu, KM ;

Huang, WC ;

Lu, YT ;

Jaw, DH ;

Li, WL ;

Chen, SM .

APPLIED PHYSICS LETTERS, 1999, 75 (02) :238-240

[5] INASSB/INALASSB STRAINED-QUANTUM-WELL DIODE-LASERS EMITTING AT 3.9 MU-M [J].

CHOI, HK ;

TURNER, GW .

APPLIED PHYSICS LETTERS, 1995, 67 (03) :332-334

[6] 175 K continuous wave operation of InAsSb/InAIAsSb quantum-well diode lasers emitting at 3.5 mu m [J].

Choi, HK ;

Turner, GW ;

Manfra, MJ ;

Connors, MK .

APPLIED PHYSICS LETTERS, 1996, 68 (21) :2936-2938

[7] Piezoreflectance study of InP near the absorption edge [J].

Chung, SY ;

Lin, DY ;

Huang, YS ;

Tiong, KK .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (12) :1850-1856

[8] Thermoreflectance study of the electronic structure of Ge(Se1-xSx)2 -: art. no. 125313 [J].

Ho, CH ;

Lin, SL ;

Wu, CC .

PHYSICAL REVIEW B, 2005, 72 (12)

[9] Piezoreflectance study of the band-edge excitons of ReS2 [J].

Ho, CH ;

Liao, PC ;

Huang, YS ;

Tiong, KK .

SOLID STATE COMMUNICATIONS, 1997, 103 (01) :19-23

[10] Photoreflectance study of the excitonic transitions of rhenium disulphide layer compounds [J].

Ho, CH ;

Yen, PC ;

Huang, YS ;

Tiong, KK .

PHYSICAL REVIEW B, 2002, 66 (24) :1-5

← 1 2 →