Theoretical study of thresholdless Auger recombination in compressively strained InAlAsSb/GaSb quantum wells

被引:25
作者
Andreev, AD
Zegrya, GG
机构
[1] A.F. Ioffe Institute, RAS, St. Petersburg 194021, Polytekhnicheskaya St.
关键词
D O I
10.1063/1.118286
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of strain on thresholdless Auger recombination in quantum wells has been studied theoretically. A detailed analysis of overlap integrals between the initial and final states of carriers has been carried out. It is shown that the strain affects both qualitatively and quantitatively the overlap integral between the electron and hole states. The Auger recombination coefficient is calculated for InAlAsSb quantum well and its dependence on quantum well parameters, strain, and temperature is analyzed. (C) 1997 American Institute of Physics.
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页码:601 / 603
页数:3
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