Trapping of transient processes in aluminium oxide thin films in a voltage pulse experiment

被引:29
作者
Hassel, AW
Diesing, D
机构
[1] Max Planck Inst Eisenforsch GmbH, D-40237 Dusseldorf, Germany
[2] Univ Dusseldorf, Inst Phys Kondensierten Mat, D-40225 Dusseldorf, Germany
关键词
current transients; dielectric films; aluminium; tunnelling; electrochemistry; MIM;
D O I
10.1016/S1388-2481(01)00260-0
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
An experimental setup is presented that allows the trapping of transient states in potentiostatic and potentiodynamic experiments. The setup is suitable for electrochemical experiments as well as for dielectric investigations. The system stops an experiment by triggering at a predefined current level after a minimum time of the voltage pulse. The advantage of this device is demonstrated by means of a voltage pulse annealing procedure for a metal-insulator metal (MIM) contact with an anodically prepared aluminium oxide film as insulator. The setup significantly increases the stability against a breakdown of the anodic oxide film. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1 / 4
页数:4
相关论文
共 10 条
[1]   Dielectric breakdown in media with defects [J].
Boksiner, J ;
Leath, PL .
PHYSICAL REVIEW E, 1998, 57 (03) :3531-3541
[2]   Definition of dielectric breakdown for ultra thin (<2 nm) gate oxides [J].
Depas, M ;
Nigam, T ;
Heyns, MM .
SOLID-STATE ELECTRONICS, 1997, 41 (05) :725-728
[3]   Aluminium oxide tunnel junctions: influence of preparation technique, sample geometry and oxide thickness [J].
Diesing, D ;
Hassel, AW ;
Lohrengel, MM .
THIN SOLID FILMS, 1999, 342 (1-2) :282-290
[4]   INITIAL-STAGES OF CATHODIC BREAKDOWN OF THIN ANODIC ALUMINUM-OXIDE FILMS [J].
HASSEL, AW ;
LOHRENGEL, MM .
ELECTROCHIMICA ACTA, 1995, 40 (04) :433-437
[5]   Differentiation between electric breakdowns and dielectric breakdown in thin silicon oxides [J].
Jackson, JC ;
Robinson, T ;
Oralkan, O ;
Dumin, DJ ;
Brown, GA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (03) :1033-1038
[6]   UNIVERSAL DIELECTRIC RESPONSE [J].
JONSCHER, AK .
NATURE, 1977, 267 (5613) :673-679
[7]   SWITCHING AND BREAKDOWN IN FILMS [J].
KLEIN, N .
THIN SOLID FILMS, 1971, 7 (3-4) :149-+
[8]   DIELECTRIC SMALL-SIGNAL RESPONSE BY PROTONS IN AMORPHOUS INSULATORS [J].
KLIEM, H .
IEEE TRANSACTIONS ON ELECTRICAL INSULATION, 1989, 24 (02) :185-197
[9]   PULSE MEASUREMENTS FOR THE INVESTIGATION OF FAST ELECTRONIC AND IONIC PROCESSES AT THE ELECTRODE ELECTROLYTE INTERFACE [J].
LOHRENGEL, MM .
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1993, 97 (03) :440-447
[10]   Degradation and hard breakdown transient of thin gate oxides in metal-SiO2-Si capacitors:: Dependence on oxide thickness [J].
Lombardo, S ;
La Magna, A ;
Spinella, C ;
Gerardi, C ;
Crupi, F .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) :6382-6391