The role of intersubband mixing in single-electron charging of open quantum dot

被引:4
作者
Baksheyev, DG
Tkachenko, OA
Tkachenko, VA
机构
[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Novosibirsk 630090, Russia
来源
PHYSICA E | 2000年 / 6卷 / 1-4期
关键词
quantum dots; single-electron charging; conductance quantization; ID-subband mixing;
D O I
10.1016/S1386-9477(99)00204-0
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We compare the electrostatics and electron transmission through the quantum dots that have the inlet/outlet constrictions made by (i) split finger gates and (ii) overlaying finger gates. It has been found numerically that the intermode mixing is large in the former case while almost absent in the latter. We beleive this difference is responsible for single-electron charging of the open quantum dot of new type (ii) observed in C.-T. Liang et al. (Phys. Rev. Lett. 81 (1998) 3507). Our calculations show that the measured periods of conductance oscillations agree well with the change of the total charge of the dot by one elemental charge as the gate voltages change. Conventionally, single-electron charging does not show up in the transport through open quantum dots due to high transition probability from localized states to fully open channels. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:414 / 417
页数:4
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