Texture, Twinning, and Metastable "Tetragonal" Phase in Ultrathin Films of HfO2 on a Si Substrate

被引：19

作者：

MacLaren, I. ^{[1
]}

Ras, T. ^{[1
]}

MacKenzie, M. ^{[1
]}

Craven, A. J. ^{[1
]}

McComb, D. W. ^{[2
]}

De Gendt, S. ^{[3
,4
]}

机构：

[1] Univ Glasgow, Fac Phys Sci, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland

[2] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England

[3] IMEC, B-3001 Louvain, Belgium

[4] Katholieke Univ Leuven, Dept Chem, B-3001 Louvain, Belgium

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2009年 / 156卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

electron diffraction; elemental semiconductors; grain size; hafnium compounds; semiconductor thin films; silicon; substrates; transmission electron microscopy; twinning; X-RAY-DIFFRACTION; THIN-FILMS; CRYSTAL STRUCTURE; TRANSFORMATION; HAFNIA; ZIRCONIA; ZRO2;

D O I：

10.1149/1.3141705

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Thin HfO2 films grown on the lightly oxidized surface of Si(100) wafers have been examined using dark-field transmission electron microscopy and selected area electron diffraction in plan view. The polycrystalline film has a grain size of the order of 100 nm, and many of the grains show evidence of twinning on (110) and (001) planes. Diffraction studies showed that the film had a strong [110] out-of-plane texture and that a tiny volume fraction of a metastable (possibly tetragonal) phase was retained. The reasons for the texture, the twinning, and the retention of the metastable phase are discussed.

引用

页码：G103 / G108

页数：6