MBE growth and properties of GaN on GaN/SiC substrates

被引：15

作者：

Johnson, MAL ^{[1
]}

Fujita, S ^{[1
]}

Rowland, WH ^{[1
]}

Bowers, KA ^{[1
]}

Hughes, WC ^{[1
]}

He, YW ^{[1
]}

ElMasry, NA ^{[1
]}

Cook, JW ^{[1
]}

Schetzina, JF ^{[1
]}

Ren, J ^{[1
]}

Edmond, JA ^{[1
]}

机构：

[1] CREE RES INC,DURHAM,NC 27713

来源：

SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 02期

关键词：

D O I：

10.1016/S0038-1101(96)00169-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Growth of III-V nitrides by molecular beam epitaxy (MBE) is being studied at NCSU using an r.f nitrogen plasma source. GaN/SiC substrates consisting of similar to 3 mu m thick GaN buffer layers grown on 6H-SiC wafers by MOVPE at Cree Research Inc. are being used as substrates in the MBE film growth experiments. The MBE-grown GaN films exhibit excellent structural and optical properties-comparable to the best GaN films grown by MOVPE-as determined from photoluminescence, X-ray diffraction, and vertical-cross-section TEM micrographs. Mg and Si have been used as dopants for p-type and n-type layers, respectively. AlxGa1-xN films (x similar to 0.06-0.08) and AlxGa1-xN/GaN multi-quantum-well structures have been grown which display good optical properties. Light-emitting diodes based on double-heterostructures of AlxGa1-xN/GaN which emit violet light at similar to 400nm have also been demonstrated. Growth of GaN on LiGaO2 substrates is also reported for comparison. (C) 1997 Elsevier Science Ltd.

引用

页码：213 / 218

页数：6

共 6 条

[1]

CHAI B, 1995, MAT RES SOC FALL M S

[2] ABSORPTION, REFLECTANCE, AND LUMINESCENCE OF GAN EXPITAXIAL LAYERS [J].