Direct evidence of the charge ordered phase transition of indium nanowires on Si(111)

被引:95
作者
Park, SJ [1 ]
Yeom, HW [1 ]
Min, SH [1 ]
Park, DH [1 ]
Lyo, IW [1 ]
机构
[1] Yonsei Univ, Ctr Atom Wires & Layers, Seoul 120749, South Korea
关键词
D O I
10.1103/PhysRevLett.93.106402
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A controversial issue of the driving force for the phase transition of the one-dimensional (1D) metallic In wires on Si(111) is studied by low-temperature scanning tunneling microscopy and spectroscopy. The energy gap opening and the longitudinal charge ordering through charge transfer at the Fermi level are unambiguously observed. The vacancy defects induce a local charge ordering decoupled from a lattice distortion above T-c, and pin the phase of charge order below T-c. All these results below and above T-c including the detailed features such as local fluctuations strongly support the 1D charge-density-wave mechanism for the phase transition.
引用
收藏
页码:106402 / 1
页数:4
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