Influence of doping on the emission and scintillation characteristics of PbWO4 single crystals

被引：53

作者：

Nikl, M

Bohácek, P

Mihóková, E

Martini, M

Meinardi, F

Vedda, A

Fabeni, P

Pazzi, GP

Kobayashi, M

Ishii, M

Usuki, Y

机构：

[1] AS CR, Inst Phys, Prague 16253, Czech Republic

[2] Univ Milan, INFM, I-20125 Milan, Italy

[3] Univ Milan, Dipartimento Sci Mat, I-20125 Milan, Italy

[4] CNR, IROE, I-50127 Florence, Italy

[5] KEK, IPNS, High Energy Accelerator Res Org, Tsukuba, Ibaraki 3050801, Japan

[6] Shonan Inst Technol, Fujisawa, Kanagawa 2518511, Japan

[7] Furukawa Co Ltd, Iwaki, Fukushima 9708511, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 09期

关键词：

D O I：

10.1063/1.373060

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray excited luminescence spectra, wavelength-resolved thermoluminescence glow curves, ultraviolet and Na-22 excited emission decays, and Co-60 excited light yield were measured on a set of high purity (99.9999%) PbWO4:X (X=Lu3+, Y3+, Gd3+, Sc3+, Nb5+, Pb2+) samples grown in an equivalent way. Positive influence of trivalent doping (Lu, Gd, Y) was noted, which consists in suppressing the deeper trapping states in the PbWO4 structure. Such states are related to the radiative recombination processes in the green and red part of the spectra. The presence of the green emission centers also results in the increase of the slow recombination decay components in the microsecond time scale. High concentration of the dopant ions (670 atomic ppm for PbWO4:Nb) results in the creation of new nonradiative recombination sites, which suppress the recombination decay components and the light yield as well. (C) 2000 American Institute of Physics. [S0021- 8979(00)01809-0].

引用

页码：4243 / 4248

页数：6