Influence of annealing temperature on the properties of ZnO thin films deposited by thermal evaporation

被引：146

作者：

Bouhssira, N.

Abed, S.

Tomasella, E.

Cellier, J.

Mosbah, A.

Aida, M. S. ^{[1
]}

Jacquet, M.

机构：

[1] Univ Constantine, Lab Couches Minces & Interfaces, Fac Sci, Constantine 25000, Algeria

[2] Univ Clermont Ferrand, Lab Mat Inorgan, UMR 6002, CNRS, F-63177 Aubiere, France

[3] Univ Farhat Abbas, Dept Phys, Fac Sci, Setif 19000, Algeria

来源：

APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 15期

关键词：

ZnO thin films; thermal evaporation; structure; electrical properties;

D O I：

10.1016/j.apsusc.2005.12.134

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ZnO thin films were deposited by thermal evaporation of a ZnO powder. The as-deposited films are dark brown, rich zinc and present a low transmittance. Then, these films were annealed in air atmosphere at different temperatures between 100 and 400 degrees C. Their microstructure and composition were studied using XRD and RBS measurements respectively. By increasing the temperature, it was found that film oxidation starts at 250 degrees C. XRD peaks related to ZnO appear and peaks related to Zn decrease. At 300 degrees C, zinc was totally oxidised and the films became totally transparent. The electrical conductivity measurement that were carried out in function of the annealing temperature showed the transition from highly conductive Zn thin film to a lower conductive ZnO thin film. The optical gap (E-g) was deduced from the UV-vis transmittance, and its variation was linked to the formation of ZnO. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：5594 / 5597

页数：4

共 27 条

[1] Optically pumped lasing of ZnO at room temperature [J].