Recent advances in ZnO transparent thin film transistors

被引:341
作者
Fortunato, E
Barquinha, P
Pimentel, A
Gonçalves, A
Marques, A
Pereira, L
Martins, R
机构
[1] Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, P-2829516 Caparica, Portugal
[2] Univ Nova Lisboa, CEMOP UNINOVA, P-2829516 Caparica, Portugal
关键词
zinc oxide; thin film transistors; rf magnetron sputtering;
D O I
10.1016/j.tsf.2005.01.066
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Zinc oxide is a well-known wide band gap semiconductor material (3.4 eV at room temperature, in the crystalline form), which has many applications, such as for transparent conductors, varistors, surface acoustic waves, gas sensors, piezoelectric transducers and UV detectors. More recently, it is attracting considerable attention for its possible application to thin film transistors. In this paper, we present some of the recent results already obtained as well as the ones that are being developed in our laboratory. The main advantage presented by these new thin film transistors is the combination of high channel mobility and transparency produced at room temperature which makes these thin film transistors a very promising low cost device for the next generation of invisible and flexible electronics. Moreover, the processing technology used to fabricate this device is relatively simple and it is compatible with inexpensive plastic/flexible substrate technology. (C) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:205 / 211
页数:7
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