Graded ferroelectric capacitors with robust temperature characteristics

被引:29
作者
El-Naggar, Mohamed Y. [1 ]
Dayal, Kaushik [1 ]
Goodwin, David G. [1 ]
Bhattacharya, Kaushik [1 ]
机构
[1] CALTECH, Div Engn & Appl Sci, Pasadena, CA 91125 USA
关键词
D O I
10.1063/1.2369650
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ferroelectric thin films offer the possibility of engineering the dielectric response for tunable components in frequency-agile rf and microwave devices. However, this approach often leads to an undesired temperature sensitivity. Compositionally graded ferroelectric films have been explored as a means of redressing this sensitivity, but experimental observations vary depending on geometry and other details. In this paper, we present a continuum model to calculate the capacitive response of graded ferroelectric films with realistic electrode geometries by accurately accounting for the polarization distribution and long-range electrostatic interactions. We show that graded c-axis poled BaxSr1-xTiO3 (BST) parallel plate capacitors are ineffective while graded a-axis poled BST coplanar capacitors with interdigitated electrodes are extremely effective in obtaining high and temperature-stable dielectric properties. (c) 2006 American Institute of Physics.
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页数:5
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