A new high performance phase shifter using BaxSr1-xTiO3 thin films

被引：155

作者：

Acikel, B ^{[1
]}

Taylor, TR

Hansen, PJ

Speck, JS

York, RA

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2002年 / 12卷 / 07期

关键词：

BaSrTiO3; distributed circuits; ferroelectric varactors; parallel plate capacitors; phase shifters; voltage controlled delay lines;

D O I：

10.1109/LMWC.2002.801129

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a new device topology has been proposed to implement parallel plate capacitors using BaxSr1-xTiO3 (BST) thin films. The device layout utilizes a single parallel capacitor and minimizes conductor losses in the base electrode. The new design simplifies the monolithic process and overcomes the problems associated with electrode patterning. An X-Band 180degrees phase shifter has been implemented using the new device design. The circuit provided 240degrees phase shift with an insertion loss of only 3 dB at 10 GHz at room temperature. We have shown a figure of merit 93degrees/dB at 6.3 GHz and 87degrees/dB at 8.5 GHz. To our knowledge, these are the best figure of merit results reported in the literature for distributed phase shifters implemented using BST films at room temperature.

引用

页码：237 / 239

页数：3

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