Effect of H2 on the electrical transport properties of single Bi2S3 nanowires

被引：33

作者：

Yao, K.

Zhang, Z. Y.

Liang, X. L.

Chen, Q. ^{[1
]}

Peng, L. -M.

Yu, Y.

机构：

[1] Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China

[2] Peking Univ, Dept Elect, Beijing 100871, Peoples R China

[3] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 2006年 / 110卷 / 43期

关键词：

D O I：

10.1021/jp065298f

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Field effect transistors have been fabricated using Bi2S3 nanowires. Whether the contact is ohmic or non-ohmic, the current of Bi2S3 nanowires was found to increase remarkably in H-2 compared to that in a vacuum. Carrier density and mobility within the nanowires and the contact barriers between the nanowires and the electrodes have been extracted using field effect and two-probe current-voltage curves. It was found that H-2 enhances electronic mobility and carrier density within the nanowires dramatically. The effect of H-2 on the contact barriers was observed to be negligible compared to the other two effects.

引用

页码：21408 / 21411

页数：4

共 22 条

[1] Transport properties,of Bi2S3 and the ternary bismuth sulfides KBi6.33S10 and K2Bi8S13 [J].