Copper grain growth in reduced dimensions

被引：10

作者：

Brongersma, SH ^{[1
]}

Vanstreels, K ^{[1
]}

Wu, W ^{[1
]}

Zhang, W ^{[1
]}

Ernur, D ^{[1
]}

D'Haen, J ^{[1
]}

Terzieva, V ^{[1
]}

Van Hove, M ^{[1
]}

Clarysse, T ^{[1
]}

Carbonell, L ^{[1
]}

Vandervorst, W ^{[1
]}

De Ceuninck, W ^{[1
]}

Maex, K ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

PROCEEDINGS OF THE IEEE 2004 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2004年

关键词：

D O I：

10.1109/IITC.2004.1345680

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The size effect observed for copper in reduced dimensions is studied by several different routes in order to further understand the relative influence of various scattering mechanisms and determine where to focus our efforts in order to reduce line resistance.

引用

页码：48 / 50

页数：3

共 10 条

[1] INFLUENCE OF GRAIN-BOUNDARY AND SURFACE SCATTERING ON THE ELECTRICAL-RESISTIVITY OF SINGLE-LAYERED THIN COPPER-FILMS [J].