Kelvin probe force microscopy of beveled semiconductors

被引：4

作者：

Ferguson, RS ^{[1
]}

Fobelets, K

Cohen, LF

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Elect Engn, Opt & Semicond Device Grp, London, England

[2] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London, England

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 05期

关键词：

D O I：

10.1116/1.1511215

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, we present the results of Kelvin probe force microscope studies on beveled samples. The ease of sample preparation and simplicity of the measurement make this technique a good candidate for the rapid characterization of semiconductor multilayers. The GaSb/InAs and Ge/SiGe/Si samples presented demonstrate both the utility and the limits of the technique. Beveling has allowed us to easily image quantum wells of 7.5 nm thickness, which is well beyond the resolution available on cleaved samples. Bevel and sample roughness are shown to be the most critical parameters in obtaining good results. (C) 2002 American Vacuum Society.

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收藏

页码：2133 / 2136

页数：4

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