Piezoelectric coefficient of BiFe1-xMnxO3 thin films measured by piezoresponse force microscopy

被引：6

作者：

Lee, S. -H. ^{[1
]}

Yang, C. -H.

Jeong, Y. H.

Birge, N. O.

机构：

[1] Pohang Univ Sci & Technol, Dept Phys, Pohang, South Korea

[2] Pohang Univ Sci & Technol, Electron Spin Sci Ctr, Pohang, South Korea

[3] Michigan State Univ, Dept Phys & Astron, E Lansing, MI 48824 USA

来源：

PHYSICA B-CONDENSED MATTER | 2006年 / 383卷 / 01期

关键词：

PFM; BiFe1-xMnxO3; piezoelectric coefficient;

D O I：

10.1016/j.physb.2006.03.043

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

BiFe1-xMnxO3 thin films were grown by pulsed laser deposition on Nb-doped SrTiO3 substrates. Piezoresponse force microscopy was utilized to investigate the piezoelectric properties of these films. The piezoelectric hysteric behavior of the films was confirmed at room temperature. It is further shown that the piezoelectric coefficient of BiFe1-xMnxO3 decreases rapidly as x increases initially, but it becomes saturated above x similar to 0.4. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：31 / 32

页数：2

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