Tellurium desorption kinetics from (112) Si: Si-Te binding energy

Transition-state theory was employed to model the tellurium adsorption characteristics and to evaluate Te-Si binding energy on a (112) Si surface. Isothermal desorption measurements of tellurium adsorbate-yielded rate parameters for the thermodynamic activation energies of adsorption and desorption. Quantitative surface analyses were made by auger electron spectroscopy and by temperature-programmed desorption mass spectrometry. The experimental rate constants for adsorption and desorption of tellurium from Si surfaces were used in the surface adsorption model. Our analyses suggested a second-order Te desorption mechanism and, upon chemisorption, the Te-Si surface binding energy calculation yielded a value of 3.46+/-0.1 eV.