Characteristics of HgCdTe CdTe hetero-epitaxial system and mid-wave diodes on 2 inch silicon

Two-inch(1 1 2) Si wafers were used to grow HgCdTe/CdTe structures by molecular beam epitaxy. Etch-pit density on CdTe layers in the thickness range 7-8 mu m were typically in the range 3-20 x 10(5) cm(-2). Samples with lower EPD values exhibited very smooth and uniform surface morphology over the entire 2-in wafer. EPD values of HgCdTe layers with a typical thickness of 7 mu m were in the 10(6) cm(-2) range. A 2-in Si wafer consisting of HgCdTe/CdTe structure was processed to fabricate n-on-p mid-wave infrared 34-element linear diode arrays. Photodiodes tested were found to have good electrical characteristics. (C) 1999 Published by Elsevier Science B.V. All rights reserved.