Planar p-on-n HgCdTe heterostructure infrared photodiodes on Si substrates by molecular beam epitaxy

被引：47

作者：

Dhar, NK

Zandian, M

Pasko, JG

Arias, JM

Dinan, JH

机构：

[1] ROCKWELL INT SCI CTR,THOUSAND OAKS,CA 91360

[2] NIGHT VIS & ELECT SENSORS DIRECTORATE,FT BELVOIR,VA 22060

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 13期

关键词：

D O I：

10.1063/1.118683

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a low temperature procedure for molecular beam epitaxy of CdTe buffer layers on {211} Si wafers and have used Si/ZnTe/CdTe composite substrates for molecular beam epitaxy of double layer Hg1-xCdxTe heterostructures. Planar p-on-n double layer heterostructures were formed by an implantation technique and test diodes were fabricated and characterized. At 77 K, devices with 30x30 mu m(2) junction area had R(0)A values in the range 1.5x10(6)-1x10(7) Omega cm(2) with a uniform cut-off wavelength of 4.65 mu m. (C) 1997 American Institute of Physics.

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页码：1730 / 1732

页数：3

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