HGCDTE ON GAAS/SI FOR MIDWAVELENGTH INFRARED FOCAL PLANE ARRAYS

被引：13

作者：

ZANIO, K

BEAN, R

MATTSON, R

VU, P

TAYLOR, S

MCINTYRE, D

ITO, C

CHU, M

机构：

[1] FORD AEROSP & COMMUN CORP,COLORADO SPRINGS,CO 80908

[2] FERMION CORP,CHATSWORTH,CA 91311

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 13期

关键词：

D O I：

10.1063/1.102561

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mid-wavelength HgCdTe was grown by metalorganic chemical vapor deposition at 390°C on CdTe/GaAs/Si substrates. Resistance-area products as high as 107 Ω cm2 were measured for 320×5 arrays of detectors having a λco of 4.6 μm at 77 K. Rudimentary thermal imaging was demonstrated for 1×32 hybrid HgCdTe/Si arrays having a λco of 2.8 μm. Temperature cycling of these arrays between room temperature and 77 K caused no significant degradation of the resistance-area products of the HgCdTe detectors.

引用

页码：1207 / 1209

页数：3

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