Heteroepitaxy of CdTe on {211}Si substrates by molecular beam epitaxy

被引：42

作者：

Million, A

Dhar, NK

Dinan, JH

机构：

[1] USA,RES LAB,FT BELVOIR,VA 22060

[2] NIGHT VIS & ELECT SENSORS DIRECTORATE,FT BELVOIR,VA 22060

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 159卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00777-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Direct growth of (211)CdTe on Si has been achieved by molecular beam epitaxy, We adopted techniques for substrate preparation that do not require heating above 540 degrees C. Si surfaces treated with As were found to produce the best nucleation. A growth schedule, interrupted multi-layer anneal cycle, was used to improve the crystal quality of the epilayer. Single domain and good surface morphology were produced,Values for full width at half maximum of the (422)CdTe X-ray reflection were as low as 106 arcsec. Transmission electron microscopy has shown the advantages of the IMAC process on the confinement of the growth defects near the interface.

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页码：76 / 80

页数：5

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