Si3N4/Si/In0.05Ga0.95As/n-GaAs metal-insulator-semiconductor devices

被引：6

作者：

Park, DG ^{[1
]}

Li, D ^{[1
]}

Tao, M ^{[1
]}

Fan, ZF ^{[1
]}

Botchkarev, AE ^{[1
]}

Mohammad, SN ^{[1
]}

Morkoc, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 01期

关键词：

D O I：

10.1063/1.364130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a novel metal-insulator-semiconductor (MIS) structure exhibiting a pseudomorphic In0.05Ga0.95As layer on GaAs with interface state densities in the low 10(11) eV(-1) cm(-2). The structure was grown by a combination of molecular beam epitaxy and chemical vapor deposition methods. The hysteresis and frequency dispersion of the MIS capacitor were lower than 100 mV, some of them as low as 30 mV under a field swing of about +/-1.3 MV/cm. The 150-Angstrom-thick In0.05Ga0.95As channel between Si and GaAs is found to bring about a change in the minority carrier recombination behavior of the GaAs channel, in the same way as done by In0.53Ga0.47As channel MIS structures. Self-aligned gate depletion mode In0.05Ga0.95As metal-insulator-semiconductor field-effect transistors having 3 mu m gate lengths exhibited field-effect bulk mobility of 1400 cm(2)/V s and transconductances of about 170 mS/mm. (C) 1997 American Institure of Physics.

引用

页码：516 / 523

页数：8

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[1] CHARACTERIZATION OF GAAS GROWN ON SI EPITAXIAL LAYERS ON GAAS SUBSTRATES [J].