Structure and morphology of c-SiC films obtained by acetylene reaction with Si(111) surface

被引:8
作者
De Crescenzi, M [1 ]
Bernardini, R [1 ]
Gunnella, R [1 ]
Castrucci, P [1 ]
机构
[1] Univ Camerino, Dipartimento Fis, Unita INFM, I-62032 Camerino, Italy
关键词
3c-SiC; structural determination; topography; nanostructures;
D O I
10.1016/S0038-1098(02)00200-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this work we investigated the structure and morphology of silicon carbide films grown under ultra-high vacuum (UHV) conditions by acetylene (C2H2) carbonization of Si(111) surfaces kept at 650 degreesC. We used several UHV electron techniques to probe the local structural properties of the film and scanning tunneling microscopy (STM) to Study its morphology. Our results indicated that C atoms occupy tetrahedral substitutional sites in the Si with a C-Si bond of 1.90 +/- 0.03 Angstrom as in a bulk cubic SiC (c-SiC) crystal. X-ray diffraction data confirmed the formation of highly (111) oriented epitaxial crystallites characterized by the c-SiC lattice. STM images showed the formation of ordered, interconnected Structures, rather flat at the atomic scale, triangular in shape, characterized by the same orientation and with an average area of 5000 nm(2) and an average height of 10-15 Angstrom. Only a few holes can be detected which may be interpreted as empty spaces left by the patchwork growth of the silicon carbide triangular islands. Therefore, our growth procedure resulted to produce crystalline c-SiC films by using one of the most lowest temperature reported in literature. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:27 / 32
页数:6
相关论文
共 38 条
[1]   Preparation of sharp gold tips for STM by using electrochemical etching method [J].
Baykul, MC .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 74 (1-3) :229-233
[2]  
BISHOFF JL, 1992, SOLID STATE COMMUN, V83, P823
[3]   Near-band-edge photoluminescence from pseudomorphic Si1-gamma C gamma/Si quantum well structures [J].
Brunner, K ;
Eberl, K ;
Winter, W .
PHYSICAL REVIEW LETTERS, 1996, 76 (02) :303-306
[4]   Growth mechanism of silicon carbide films on silicon substrates using C-60 carbonization [J].
Chen, D ;
Workman, R ;
Sarid, D .
SURFACE SCIENCE, 1995, 344 (1-2) :23-32
[5]   Carbon incorporation in Si1-yCy alloys grown by molecular beam epitaxy using a single silicon-graphite source [J].
Dashiell, MW ;
Kulik, LV ;
Hits, D ;
Kolodzey, J ;
Watson, G .
APPLIED PHYSICS LETTERS, 1998, 72 (07) :833-835
[6]   Si1-xCx formation by reaction of Si(111) with acetylene:: growth mode, electronic structure and luminescence investigation [J].
De Crescenzi, M ;
Marucci, M ;
Gunnella, R ;
Castrucci, P ;
Casalboni, M ;
Dufour, G ;
Rochet, F .
SURFACE SCIENCE, 1999, 426 (03) :277-289
[7]   Acetylene on Si(111): carbon incorporation in the growth of c-SiC thin layers [J].
De Crescenzi, M ;
Bernardini, R ;
Pollano, S ;
Gunnella, R ;
Castrucci, P ;
Dufour, G ;
Rochet, F .
SURFACE SCIENCE, 2001, 489 (1-3) :185-190
[8]   Interaction of acetylene on Si(111):: growth and luminescence study of Si1-xCx thin layers [J].
De Crescenzi, M ;
Bernardini, R ;
Gunnella, R ;
Castrucci, P ;
Casalboni, M ;
Pizzoferrato, R ;
Dufour, G ;
Rochet, F .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 2000, 80 (04) :669-678
[9]   SiC formation on Si(100) via C60 precursors [J].
De Seta, M ;
Tomozeiu, N ;
Sanvitto, D ;
Evangelisti, F .
SURFACE SCIENCE, 2000, 460 (1-3) :203-213
[10]   STRUCTURAL SURFACE INVESTIGATIONS WITH LOW-ENERGY BACKSCATTERED ELECTRONS [J].
DECRESCENZI, M .
SURFACE SCIENCE REPORTS, 1995, 21 (3-4) :89-175