Growth mechanism of silicon carbide films on silicon substrates using C-60 carbonization

被引：44

作者：

Chen, D ^{[1
]}

Workman, R ^{[1
]}

Sarid, D ^{[1
]}

机构：

[1] UNIV ARIZONA,CTR OPT SCI,TUCSON,AZ 85721

来源：

SURFACE SCIENCE | 1995年 / 344卷 / 1-2期

关键词：

carbon; fullerenes; growth; scanning tunneling microscopy; silicon;

D O I：

10.1016/0039-6028(95)00840-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Silicon carbide films were grown on silicon substrates using C-60 molecules as a carbon source. The grown films were characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and infrared spectroscopy (IRS). Also, using SiO2 as a mask on the Si substrate, a patterned SiC him was grown. Growth and defect mechanisms are discussed and compared with conventional CVD carbidizing methods.

引用

页码：23 / 32

页数：10

共 13 条

[1]

CHANG RPH, 1992, APPL PHYS LETT, V59, P3461

[2] FABRICATION OF SIC FILMS ON SI(100) USING A C-60 MOLECULAR SOURCE [J].