GROWTH MECHANISM OF POLYCRYSTALLINE BETA-SIC LAYERS ON SILICON SUBSTRATE

被引：52

作者：

GRAUL, J

WAGNER, E

机构：

来源：

APPLIED PHYSICS LETTERS | 1972年 / 21卷 / 02期

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D O I：

10.1063/1.1654282

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：67 / &

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