LOW-TEMPERATURE EPITAXY OF BETA-SIC BY REACTIVE DEPOSITION

被引：36

作者：

LEARN, AJ

HAQ, KE

机构：

来源：

关键词：

D O I：

10.1063/1.1653238

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：26 / &

共 9 条

[1] Bartlett R. W., 1969, MATER RES B, V4, pS341
[2] BERMAN I, 1969, MAT RES B, V4, pS107
[3] ETCHING OF ALPHA-SILICON CARBIDE
BRANDER, RW
BOUGHEY, AL
[J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (07): : 905 - &
[4] CHEMICAL PROCESSES IN SIC FORMATION BY REACTIVE DEPOSITION AND CHEMICAL CONVERSION
HAQ, KE
LEARN, AJ
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 431 - &
[5] Khan I.H., 1969, MATER RES B, V4, pS285
[6] FORMATION OF EPITAXIAL BETA-SIC FILMS ON SAPPHIRE
KHAN, IH
LEARN, AJ
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (12) : 410 - &
[7] REACTIVE DEPOSITION OF CUBIC SILICON CARBIDE
LEARN, AJ
HAQ, KE
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 430 - &
[8] LEARN AJ, TO BE PUBLISHED
[9] SPIELMANN W, 1965, Z ANGEW PHYSIK, V19, P93