FORMATION OF EPITAXIAL BETA-SIC FILMS ON SAPPHIRE

被引：12

作者：

KHAN, IH

LEARN, AJ

机构：

[1] NASA/Electronics Research Center, Cambridge

来源：

APPLIED PHYSICS LETTERS | 1969年 / 15卷 / 12期

关键词：

D O I：

10.1063/1.1652881

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial β-SiC films have been formed on sapphire by chemical conversion of thin single-crystal Si-on-sapphire films. The conversion is obtained by reaction of C2H2 with Si within the temperature range 900-1200°C. It is observed that epitaxy persists up to a certain depth, beyond which film orientation degenerates. The growth morphology of the β-SiC films appears to be related to surface granularity of the Si films and differs from that observed for conversion of bulk Si. © 1969 The American Institute of Physics.

引用

页码：410 / &

共 9 条

[1] CHEMICAL PROCESSES IN SIC FORMATION BY REACTIVE DEPOSITION AND CHEMICAL CONVERSION [J].