GROWTH OF SILICON-CARBIDE FILMS VIA C-60 PRECURSORS

Epitaxial silicon carbide films are grown on Si(100) and Si(111) substrates at surface temperatures between 950 and 1250 K via C60 precursors. Films have been grown up to thicknesses greater than 1 mum. The growth rate of the SiC film is not limited by the surface reaction rate of C60 with silicon at these temperatures, rather by the arrival rate of the reactants Si (by diffusion) or C60. This results in rapid film growth. Films have been characterized by low energy electron diffraction, X-ray diffraction, and Auger depth profiling. X-ray diffraction suggests the growth of beta-SiC in the temperature range investigated. Auger depth profiling shows the film is stoichiometric. Selective crystalline silicon carbide growth is achieved on patterned silicon-silicon oxide samples.