SAPPHIRE (112BAR0) SURFACE - STRUCTURE AND LASER-INDUCED DESORPTION OF ALUMINUM

被引:41
作者
SCHILDBACH, MA [1 ]
HAMZA, AV [1 ]
机构
[1] UNIV CALIF LAWRENCE LIVERMORE NATL LAB,DEPT CHEM & MAT SCI,LIVERMORE,CA 94550
来源
PHYSICAL REVIEW B | 1992年 / 45卷 / 11期
关键词
D O I
10.1103/PhysRevB.45.6197
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The laser-induced desorption of particles from a well-characterized sapphire (1120BAR) surface at laser wavelengths of 1064 nm (1.17 eV) and 355 nm (3.51 eV) was investigated by time-of-flight mass spectrometry. Below the laser ablation threshold, only aluminum ions were observed to desorb with average kinetic energies of 7.0 +/- 0.7 eV at both photon energies. The high kinetic energies of the desorbing aluminum ions indicate that the desorption mechanism is electronic. The surface atomic and electronic structure was studied with low-energy electron diffraction (LEED), reflection electron-energy-loss spectroscopy, and Auger electron spectroscopy. After heating the surface to over 1500 K, a reconstructed surface exhbiting a (12 x 4) LEED pattern was established. The electron-energy-loss spectrum from the (12 x 4) surface revealed the presence of surface electronic states in the bulk band gap of sapphire as evidenced by a broad (approximately 2 eV full width at half maximum) energy-loss feature centered at 3.6 eV. The surface electronic states are believed to participate in the photon-absorption process.
引用
收藏
页码:6197 / 6206
页数:10
相关论文
共 54 条
[1]   MODEL FOR ELECTRON-STIMULATED AND PHOTON-STIMULATED DESORPTION [J].
ANTONIEWICZ, PR .
PHYSICAL REVIEW B, 1980, 21 (09) :3811-3815
[2]   HIGH-RESOLUTION MULTIPHOTON LASER-INDUCED FLUORESCENCE SPECTROSCOPY OF ZINC ATOMS EJECTED FROM LASER-IRRADIATED ZNS CRYSTALS [J].
ARLINGHAUS, HF ;
CALAWAY, WF ;
YOUNG, CE ;
PELLIN, MJ ;
GRUEN, DM ;
CHASE, LL .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (01) :281-289
[3]   CORE EXCITONS IN CORUNDUM [J].
BALZAROTTI, A ;
ANTONANGELI, F ;
GIRLANDA, R ;
MARTINO, G .
SOLID STATE COMMUNICATIONS, 1982, 44 (02) :275-278
[4]   ELECTRONIC-ENERGY LEVELS OF ALPHA-AL2O3 FROM L-EDGE PHOTOABSORPTION OF ALUMINUM AND SMALL-CLUSTER CNDO CALCULATIONS [J].
BALZAROTTI, A ;
ANTONANGELI, F ;
GIRLANDA, R ;
MARTINO, G .
PHYSICAL REVIEW B, 1984, 29 (10) :5903-5908
[5]   ELS INVESTIGATIONS OF BEGINNING OXIDATION ON ALUMINUM THIN-FILMS [J].
BENNDORF, C ;
KELLER, G ;
SEIDEL, H ;
THIEME, F .
SURFACE SCIENCE, 1977, 67 (02) :589-595
[6]  
BRYTOV IA, 1978, FIZ TVERD TELA, V20, P384
[7]  
BUJOR M, 1982, J VAC SCI TECHNOL, V20, P392, DOI 10.1116/1.571474
[8]   SILICON-ON-SAPPHIRE EPITAXY BY VACUUM SUBLIMATION - LEED-AUGER STUDIES AND ELECTRONIC PROPERTIES OF FILMS [J].
CHANG, CC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (03) :500-&
[9]   LEED STUDIES OF (0001) FACE OF ALPHA-ALUMINA [J].
CHANG, CC .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5570-&
[10]   LOW-ENERGY ELECTRON DIFFRACTION OBSERVATIONS OF ALPHA-ALUMINA [J].
CHARIG, JM .
APPLIED PHYSICS LETTERS, 1967, 10 (05) :139-&