Highly conductive Nb doped SrTiO3 epitaxial thin films grown by laser molecular beam epitaxy

被引：43

作者：

Zhao, T

Lu, HB

Chen, F

Dai, SY

Yang, GZ

Chen, ZH

机构：

[1] Chinese Acad Sci, Lab Opt Phys, Inst Phys, Beijing 100080, Peoples R China

[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 212卷 / 3-4期

关键词：

Nb doped SiTiO3 thin film; conductivity; epitaxial growth; laser molecular beam epitaxy;

D O I：

10.1016/S0022-0248(00)00307-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Highly conductive Nb doped SrTiO3 (Nb:STO) thin films with good crystallinity and smooth surfaces were epitaxially grown on SrTiO3 (STO) (1 0 0) substrates by laser molecular beam epitaxy. The resistivity, carrier concentration and mobility of the Nb:STO thin film are 3.6 x 10(-4) Omega cm, 2.8 x 10(21) cm(-3) and 12.7 cm(2)/V s, respectively, which are the best values in Nb:STO thin films reported so far. The root-mean-square surface roughness of the deposited thin him is measured to be 0.240 nm by atomic force microscopy. The chemical composition and its uniform distribution in the film were confirmed by angle-resolved X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry. The difference of electronic structure in the band gap region between Nb : STO and STO thin films was studied by X-ray photoelectron spectroscopy. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：451 / 455

页数：5

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