Improvement of InGaN/GaN light emitting diode performance with a nano-roughened p-GaN surface by excimer laser-irradiation

被引：15

作者：

Huang, Hung-Wen

Kao, C. C.

Chu, J. T.

Liang, W. D.

Kuo, H. C. ^{[1
]}

Wang, S. C.

Yu, C. C.

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Inst Electroopt Engn, Hsinchu 300, Taiwan

[2] TrueLight Corp, Hsinchu 300, Taiwan

[3] Highlink Corp, Hsinchu 300, Taiwan

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2006年 / 99卷 / 2-3期

关键词：

gallium nitride (GaN); light emitting diode (LED); excimer laser; NITRIDE-BASED LEDS; ACTIVATION;

D O I：

10.1016/j.matchemphys.2005.11.013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we reported the InGaN/GaN light emitting diode (LED) with a nano-roughened top p-GaN surface which caused by KrF excimer laser-irradiation. Comparing with the conventional LED, the brightness of InGaN/GaN light emitting diode (LED) was raised by a factor of 1.25 at 20 mA after KrF excimer laser-irradiation (250 mJ cm(-2) at 248 nm for 25 ns). Meanwhile, the operation voltage of InGaN/GaN LED was reduced from 3.55 to 3.3 V at 20 mA with 29% reduction in the series resistance. The causes for the brightness increase can be attributed to laser-irradiation induced nano-roughening of p-GaN surface. The reduction in the series resistance can be attributed to the increased contact area of nano-roughened surface and higher hole concentration after laser-irradiation. (c) 2005 Published by Elsevier B.V.

引用

页码：414 / 417

页数：4

共 16 条

[1] Nitride-based LEDs with textured side walls [J].