Nitride-based LEDs with textured side walls

被引：57

作者：

Chang, CS ^{[1
]}

Chang, SJ

Su, YK

Lee, CT

Lin, YC

Lai, WC

Shei, SC

Ke, JC

Lo, HM

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] S Epitaxy Corp, Hsin Shi 744, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 03期

关键词：

GaN; indium-tin oxide (ITO); light-emitting diode (LED); side wall texture;

D O I：

10.1109/LPT.2004.823768

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nitride-based light-emitting diodes (LEDs) with textured side walls were fabricated. By using plasma-enhanced chemical vapor deposition SiO2 layer as the etching mask, we successfully etched the nitride epitaxial layers to achieve wavelike side walls. It was found that such wavelike side walls could mainly enhance the light output at the horizontal directions. With a 20-mA current injection, it was found that the output powers of the LED with textured side walls and normal LED were 9.3 and 8.4 mW, respectively. Furthermore, it was found that such textured side walls will not result in a higher operation voltage.

引用

页码：750 / 752

页数：3

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