Highly reliable nitride-based LEDs with SPS plus ITO upper contacts

被引：125

作者：

Chang, SJ ^{[1
]}

Chang, CS

Su, YK

Chuang, RW

Lin, YC

Shei, SC

Lo, HM

Lin, HY

Ke, JC

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] S Epitaxy Corp, Hsin 744, Taiwan

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2003年 / 39卷 / 11期

关键词：

GaN; indium tin oxide (ITO); passivation; reliability;

D O I：

10.1109/JQE.2003.818312

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nitride-based blue light emitting diodes (LEDs) with an n(+)-short period superlattice (SPS) tunnel contact layer and an indium tin oxide (ITO) transparent contact were fabricated. Compared with conventional nitride-based LEDs with Ni/Au upper contacts, it was found that we could achieve a 60% increase in electroluminescence (EL) intensity by using ITO upper contacts. However, it was also found that the lifetime of ITO LEDs were much shorter. Furthermore, it was found that we could achieve a longer lifetime and a smaller reverse leakage current (I-R) by the deposition of a SiO2 layer on top of the ITO LEDs.

引用

页码：1439 / 1443

页数：5

共 15 条

[1]

Chan CY, 2001, IEEE T INTELL TRANSP, V2, P1, DOI 10.1109/6979.911080

[2] GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts [J].

Chang, SJ ;

Lee, ML ;

Sheu, JK ;

Lai, WC ;

Su, YK ;

Chang, CS ;

Kao, CJ ;

Chi, GC ;

Tsai, JA .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (04) :212-214

[3] InGaN-GaN multiquantum-well blue and green light-emitting diodes [J].

Chang, SJ ;

Lai, WC ;

Su, YK ;

Chen, JF ;

Liu, CH ;

Liaw, UH .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) :278-283

[4] 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes [J].

Chang, SJ ;

Kuo, CH ;

Su, YK ;

Wu, LW ;

Sheu, JK ;

Wen, TC ;

Lai, WC ;

Chen, JF ;

Tsai, JM .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (04) :744-748

[5]

CHANG SJ, UNPUB IEEE PHOTON TE

[6] Nitride-based cascade near white light-emitting diodes [J].

Chen, CH ;

Chang, SJ ;

Su, YK ;

Sheu, JK ;

Chen, JF ;

Kuo, CH ;

Lin, YC .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (07) :908-910

[7] High detectivity InGaN-GaN multiquantum well p-n junction photodiodes [J].

Chiou, YZ ;

Su, YK ;

Chang, SJ ;

Gong, J ;

Lin, YC ;

Liu, SH ;

Chang, CS .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (05) :681-685

[8] GaN tunnel junction as a current aperture in a blue surface-emitting light-emitting diode [J].

Jeon, SR ;

Oh, CS ;

Yang, JW ;

Yang, GM ;

Yoo, BS .

APPLIED PHYSICS LETTERS, 2002, 80 (11) :1933-1935

[9] InGaN-AlInGaN multiquantum-well LEDs [J].

Lai, WC ;

Chang, SJ ;

Yokoyam, M ;

Sheu, JK ;

Chen, JF .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (06) :559-561

[10] Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts [J].

Lin, YC ;

Chang, SJ ;

Su, YK ;

Tsai, TY ;

Chang, CS ;

Shei, SC ;

Hsu, SJ ;

Liu, CH ;

Liaw, UH ;

Chen, SC ;

Huang, BR .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (12) :1668-1670

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